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  1. Product

    4H Semi-Insulating

    Current > 4H Semi-Insulating
    SICC is constantly pursuing higher crystal quality and processing quality to meet customer needs.
    The 4 & 6 inch products are available for supply currently
    The 8-inch product is under development

    *Please contact our sales for more detailed information.

    >Contact us


    Semi-insulating type
    • Polytype 4H
    • Diameter(mm) 100 & 150
    • Orientation(°) 0
    • Thickness(μm) 500
    • Surface Finish Epi-ready

    RF Devices

    By growing GaN epitaxy layer on semi-insulating silicon carbide substrate, silicon carbide based GAN epitaxy wafer can be further made into HEMT and other microwave RF devices, which can be used in information communication, radio detection and other fields.
    ? 2021 Copyright SICC Co., Ltd. All Rights Reserved.
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